parameter l value unit drain-source voltage v dss 600 v drain current - continuous i d 4.4 a drain current - pulsed i dm 17.6 a gate-source voltage v gss 30 v power dissipation p d 106 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c FQPF4N60 description parameter symbol test conditions min. typ. max. unit drain-source breakdown voltage bv dss v gs = 0v, i d =250 a 600 v zero gate voltage drain current i dss v ds =600v, v gs =0v 10 ua gate-body leakage current, forward i gssf v gs =30v, v ds =0v 100 na gate-body leakage current, reverse i gssr v gs = -30v, v ds =0v -100 na gate threshold voltage v gs(th) v ds = v gs , i d =250 a 3.0 5.0 v static drain-source on-resistance r ds(on) v gs = 10 v, i d = 2.2 a 1.77 2.2 w drain-source diode forward voltage v sd v gs = 0 v, i s = 4.4 a 1.4 v 600v n-channel mosfet product specification these n-channel enhancement mode power field effect transistors are produced using proprietary,planar, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supplies. electrical characteristics absolute maximum ratings( ta = 25 c) o ( ta = 25 c) o to-220f tiger electronic co.,ltd
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